Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Produk Detail:

  • Author : Uwe Schroeder
  • Publisher : Woodhead Publishing Limited
  • Pages : 570 pages
  • ISBN : 9780081024300
  • Rating : 4/5 from 21 reviews
CLICK HERE TO GET THIS BOOKFerroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide
  • Author : Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
  • Publisher : Woodhead Publishing Limited
  • Release : 01 April 2019
GET THIS BOOKFerroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also

Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide
  • Author : Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
  • Publisher : Woodhead Publishing
  • Release : 27 March 2019
GET THIS BOOKFerroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also

Negative Capacitance in Ferroelectric Materials

Negative Capacitance in Ferroelectric Materials
  • Author : Michael Hoffmann
  • Publisher : BoD – Books on Demand
  • Release : 15 September 2020
GET THIS BOOKNegative Capacitance in Ferroelectric Materials

This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.

Ferroelectric-Gate Field Effect Transistor Memories

Ferroelectric-Gate Field Effect Transistor Memories
  • Author : Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon
  • Publisher : Springer Nature
  • Release : 23 March 2020
GET THIS BOOKFerroelectric-Gate Field Effect Transistor Memories

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells

Memristive Devices for Brain-Inspired Computing

Memristive Devices for Brain-Inspired Computing
  • Author : Sabina Spiga,Abu Sebastian,Damien Querlioz,Bipin Rajendran
  • Publisher : Woodhead Publishing
  • Release : 12 June 2020
GET THIS BOOKMemristive Devices for Brain-Inspired Computing

Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications—Computational Memory, Deep Learning, and Spiking Neural Networks reviews the latest in material and devices engineering for optimizing memristive devices beyond storage applications and toward brain-inspired computing. The book provides readers with an understanding of four key concepts, including materials and device aspects with a view of current materials systems and their remaining barriers, algorithmic aspects comprising basic concepts of neuroscience as well as various computing concepts, the

Intelligent Circuits and Systems

Intelligent Circuits and Systems
  • Author : Rajesh Singh,Anita Gehlot
  • Publisher : CRC Press
  • Release : 01 August 2021
GET THIS BOOKIntelligent Circuits and Systems

ICICS-2020 is the third conference initiated by the School of Electronics and Electrical Engineering at Lovely Professional University that explored recent innovations of researchers working for the development of smart and green technologies in the fields of Energy, Electronics, Communications, Computers, and Control. ICICS provides innovators to identify new opportunities for the social and economic benefits of society. This conference bridges the gap between academics and R&D institutions, social visionaries, and experts from all strata of society to present

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films
  • Author : Ekaterina Yurchuk
  • Publisher : Logos Verlag Berlin GmbH
  • Release : 30 June 2015
GET THIS BOOKElectrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain

Ferroelectric Thin Films

Ferroelectric Thin Films
  • Author : De Araujo Paz
  • Publisher : Taylor & Francis
  • Release : 17 October 1996
GET THIS BOOKFerroelectric Thin Films

The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis

Ferroelectric Random Access Memories

Ferroelectric Random Access Memories
  • Author : Hiroshi Ishiwara,Masanori Okuyama,Yoshihiro Arimoto
  • Publisher : Springer Science & Business Media
  • Release : 16 April 2004
GET THIS BOOKFerroelectric Random Access Memories

The book consists of 5 parts: (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects; each part is further divided into several chapters. Because of the wide range of topics discussed, each chapter in this book was written by one of the best authors knowing the specific topic very well.

Formation of Ferroelectricity in Hafnium Oxide Based Thin Films

Formation of Ferroelectricity in Hafnium Oxide Based Thin Films
  • Author : Tony Schenk
  • Publisher : BoD – Books on Demand
  • Release : 15 March 2017
GET THIS BOOKFormation of Ferroelectricity in Hafnium Oxide Based Thin Films

In 2011, Böscke et al. reported the unexpected discovery of ferroelectric properties in hafnia based thin films, which has since initiated many further studies and revitalized research on the topic of ferroelectric memories. In spite of many efforts, the unveiling of the fundamentals behind this surprising discovery has proven rather challenging. In this work, the originally claimed Pca21 phase is experimentally proven to be the root of the ferroelectric properties and the nature of this ferroelectricity is classified in the

Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology
  • Author : Yoshio Nishi,Blanka Magyari-Kope
  • Publisher : Woodhead Publishing
  • Release : 15 June 2019
GET THIS BOOKAdvances in Non-volatile Memory and Storage Technology

Advances in Nonvolatile Memory and Storage Technology, Second Edition, addresses recent developments in the non-volatile memory spectrum, from fundamental understanding, to technological aspects. The book provides up-to-date information on the current memory technologies as related by leading experts in both academia and industry. To reflect the rapidly changing field, many new chapters have been included to feature the latest in RRAM technology, STT-RAM, memristors and more. The new edition describes the emerging technologies including oxide-based ferroelectric memories, MRAM technologies, and 3

Frontiers of Materials Research

Frontiers of Materials Research
  • Author : National Academies of Sciences, Engineering, and Medicine,Division on Engineering and Physical Sciences,Board on Physics and Astronomy,National Materials and Manufacturing Board,Committee on Frontiers of Materials Research: A Decadal Survey
  • Publisher : National Academies Press
  • Release : 12 September 2019
GET THIS BOOKFrontiers of Materials Research

Modern materials science builds on knowledge from physics, chemistry, biology, mathematics, computer and data science, and engineering sciences to enable us to understand, control, and expand the material world. Although it is anchored in inquiry-based fundamental science, materials research is strongly focused on discovering and producing reliable and economically viable materials, from super alloys to polymer composites, that are used in a vast array of products essential to today's societies and economies. Frontiers of Materials Research: A Decadal Survey is

Chemical Solution Synthesis for Materials Design and Thin Film Device Applications

Chemical Solution Synthesis for Materials Design and Thin Film Device Applications
  • Author : Soumen Das,Sandip Dhara
  • Publisher : Elsevier
  • Release : 09 January 2021
GET THIS BOOKChemical Solution Synthesis for Materials Design and Thin Film Device Applications

Chemical Solution Synthesis for Materials Design and Thin Film Device Applications presents current research on wet chemical techniques for thin-film based devices. Sections cover the quality of thin films, types of common films used in devices, various thermodynamic properties, thin film patterning, device configuration and applications. As a whole, these topics create a roadmap for developing new materials and incorporating the results in device fabrication. This book is suitable for graduate, undergraduate, doctoral students, and researchers looking for quick guidance

Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes

Development of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes
  • Author : Stefan Ferdinand Müller
  • Publisher : BoD – Books on Demand
  • Release : 08 April 2016
GET THIS BOOKDevelopment of HfO2-Based Ferroelectric Memories for Future CMOS Technology Nodes

This thesis evaluates the viability of ferroelectric Si:HfO2 and its derived FeFET application for non-volatile data storage. At the beginning, the ferroelectric effect is explained briefly such that the applications that make use of it can be understood. Afterwards, the latest findings on ferroelectric HfO2 are reviewed and their potential impact on future applications is discussed. Experimental data is presented afterwards focusing on the ferroelectric material characteristics of Si:HfO2 that are most relevant for memory applications. Besides others,