Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face

Produk Detail:

  • Author : Uwe Schroeder
  • Publisher : Woodhead Publishing
  • Pages : 570 pages
  • ISBN : 0081024312
  • Rating : 4/5 from 21 reviews
CLICK HERE TO GET THIS BOOKFerroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide
  • Author : Uwe Schroeder,Cheol Seong Hwang,Hiroshi Funakubo
  • Publisher : Woodhead Publishing
  • Release : 27 March 2019
GET THIS BOOKFerroelectricity in Doped Hafnium Oxide

Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also

Negative Capacitance in Ferroelectric Materials

Negative Capacitance in Ferroelectric Materials
  • Author : Michael Hoffmann
  • Publisher : BoD – Books on Demand
  • Release : 15 September 2020
GET THIS BOOKNegative Capacitance in Ferroelectric Materials

This dissertation investigates the phenomenon of negative capacitance in ferroelectric materials, which is promising for overcoming the fundamental limits of energy efficiency in electronics. The focus of this dissertation is on negative capacitance in hafnium oxide based ferroelectrics and the impact of ferroelectric domain formation.

Ferroelectric-Gate Field Effect Transistor Memories

Ferroelectric-Gate Field Effect Transistor Memories
  • Author : Byung-Eun Park,Hiroshi Ishiwara,Masanori Okuyama,Shigeki Sakai,Sung-Min Yoon
  • Publisher : Springer Nature
  • Release : 23 March 2020
GET THIS BOOKFerroelectric-Gate Field Effect Transistor Memories

This book provides comprehensive coverage of the materials characteristics, process technologies, and device operations for memory field-effect transistors employing inorganic or organic ferroelectric thin films. This transistor-type ferroelectric memory has interesting fundamental device physics and potentially large industrial impact. Among various applications of ferroelectric thin films, the development of nonvolatile ferroelectric random access memory (FeRAM) has been most actively progressed since the late 1980s and reached modest mass production for specific application since 1995. There are two types of memory cells

Memristive Devices for Brain-Inspired Computing

Memristive Devices for Brain-Inspired Computing
  • Author : Sabina Spiga,Abu Sebastian,Damien Querlioz,Bipin Rajendran
  • Publisher : Woodhead Publishing
  • Release : 12 June 2020
GET THIS BOOKMemristive Devices for Brain-Inspired Computing

Memristive Devices for Brain-Inspired Computing: From Materials, Devices, and Circuits to Applications—Computational Memory, Deep Learning, and Spiking Neural Networks reviews the latest in material and devices engineering for optimizing memristive devices beyond storage applications and toward brain-inspired computing. The book provides readers with an understanding of four key concepts, including materials and device aspects with a view of current materials systems and their remaining barriers, algorithmic aspects comprising basic concepts of neuroscience as well as various computing concepts, the

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

Electrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films
  • Author : Ekaterina Yurchuk
  • Publisher : Logos Verlag Berlin GmbH
  • Release : 30 June 2015
GET THIS BOOKElectrical Characterisation of Ferroelectric Field Effect Transistors based on Ferroelectric HfO2 Thin Films

Ferroelectric field effect transistor (FeFET) memories based on a new type of ferroelectric material (silicon doped hafnium oxide) were studied within the scope of the present work. Utilisation of silicon doped hafnium oxide (Si:HfO2 thin films instead of conventional perovskite ferroelectrics as a functional layer in FeFETs provides compatibility to the CMOS process as well as improved device scalability. The influence of different process parameters on the properties of Si:HfO2 thin films was analysed in order to gain

Magnetic, Ferroelectric, and Multiferroic Metal Oxides

Magnetic, Ferroelectric, and Multiferroic Metal Oxides
  • Author : Biljana Stojanovic
  • Publisher : Elsevier
  • Release : 02 January 2018
GET THIS BOOKMagnetic, Ferroelectric, and Multiferroic Metal Oxides

Magnetic, Ferroelectric, and Multiferroic Metal Oxides covers the fundamental and theoretical aspects of ferroics and magnetoelectrics, their properties, and important technological applications, serving as the most comprehensive, up-to-date reference on the subject. Organized in four parts, Dr. Biljana Stojanovic leads expert contributors in providing the context to understand the material (Part I: Introduction), the theoretical and practical aspects of ferroelectrics (Part II: Ferroelectrics: From Theory, Structure and Preparation to Application), magnetic metal oxides (Part III: Magnetic Oxides: Ferromagnetics, Antiferromagnetics and

Electroceramics

Electroceramics
  • Author : A. J. Moulson,J. M. Herbert
  • Publisher : John Wiley & Sons
  • Release : 12 September 2003
GET THIS BOOKElectroceramics

Electroceramics, Materials, Properties, Applications, Second Edition provides a comprehensive treatment of the many aspects of ceramics and their electrical applications. The fundamentals of how electroceramics function are carefully introduced with their properties and applications also considered. Starting from elementary principles, the physical, chemical and mathematical background of the subject are discussed and wherever appropriate, a strong emphasis is placed on the relationship between microstructire and properties. The Second Edition has been fully revised and updated, building on the foundation of

Ferroelectric Thin Films

Ferroelectric Thin Films
  • Author : Masanori Okuyama
  • Publisher : Springer Science & Business Media
  • Release : 22 February 2005
GET THIS BOOKFerroelectric Thin Films

Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers, gives detailed information about the basic properties of these materials and the associated device physics. The contributing authors are acknowledged experts in the field.

Perovskite Oxide for Solid Oxide Fuel Cells

Perovskite Oxide for Solid Oxide Fuel Cells
  • Author : Tatsumi Ishihara
  • Publisher : Springer Science & Business Media
  • Release : 12 June 2009
GET THIS BOOKPerovskite Oxide for Solid Oxide Fuel Cells

Fuel cell technology is quite promising for conversion of chemical energy of hydrocarbon fuels into electricity without forming air pollutants. There are several types of fuel cells: polymer electrolyte fuel cell (PEFC), phosphoric acid fuel cell (PAFC), molten carbonate fuel cell (MCFC), solid oxide fuel cell (SOFC), and alkaline fuel cell (AFC). Among these, SOFCs are the most efficient and have various advantages such as flexibility in fuel, high reliability, simple balance of plant (BOP), and a long history. Therefore,

Ferroelectric Thin Films

Ferroelectric Thin Films
  • Author : Carlos Paz de Araujo,James F. Scott,George W. Taylor
  • Publisher : Taylor & Francis
  • Release : 28 February 1996
GET THIS BOOKFerroelectric Thin Films

The impetus for the rapid development of thin film technology, relative to that of bulk materials, is its application to a variety of microelectronic products. Many of the characteristics of thin film ferroelectric materials are utilized in the development of these products - namely, their nonvolatile memory and piezoelectric, pyroelectric, and electro-optic properties. It is befitting, therefore, that the first of a set of three complementary books with the general title Integrated Ferroelectric Devices and Technologies focuses on the synthesis

Advanced Materials

Advanced Materials
  • Author : Ivan A. Parinov,Shun-Hsyung Chang,Banh Tien Long
  • Publisher : Springer Nature
  • Release : 16 June 2020
GET THIS BOOKAdvanced Materials

This book presents selected peer-reviewed contributions from the 2019 International Conference on “Physics and Mechanics of New Materials and Their Applications”, PHENMA 2019 (Hanoi, Vietnam, 7–10 November, 2019), divided into four scientific themes: processing techniques, physics, mechanics, and applications of advanced materials. The book describes a broad spectrum of promising nanostructures, crystals, materials and composites with special properties. It presents nanotechnology approaches, modern environmentally friendly techniques and physical-chemical and mechanical studies of the structural-sensitive and physical–mechanical properties of materials. The obtained results are

Gallium Oxide

Gallium Oxide
  • Author : Masataka Higashiwaki,Shizuo Fujita
  • Publisher : Springer Nature
  • Release : 23 April 2020
GET THIS BOOKGallium Oxide

This book provides comprehensive coverage of the new wide-bandgap semiconductor gallium oxide (Ga2O3). Ga2O3 has been attracting much attention due to its excellent materials properties. It features an extremely large bandgap of greater than 4.5 eV and availability of large-size, high-quality native substrates produced from melt-grown bulk single crystals. Ga2O3 is thus a rising star among ultra-wide-bandgap semiconductors and represents a key emerging research field for the worldwide semiconductor community. Expert chapters cover physical properties, synthesis, and state-of-the-art