Fully Depleted Silicon On Insulator

Fully Depleted Silicon-On-Insulators: FD-SOI Devices, Mechanisms and Characterization Techniques presents an in-depth introduction to the key concepts of this increasingly important and advanced technology. The book covers FinFETs and Fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency and internet-of-things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on silicon-on-insulator materials and devices, this book will cover exhaustively the FD-SOI domain. It is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanue, an IEEE Andrew Grove 2017 award recipient "For contributions to silicon-on-insulator technology and thin body devices. In the book, he shares key insights on the technology aspects, operation mechanisms, characterization techniques and most promising emerging applications. Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices Discusses FD-SOI’s most promising device structures for memory, sensing and emerging applications

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  • Author : Sorin Cristoloveanu
  • Publisher : Elsevier
  • Pages : 384 pages
  • ISBN : 0128231653
  • Rating : 4/5 from 21 reviews
CLICK HERE TO GET THIS BOOKFully Depleted Silicon On Insulator

Fully Depleted Silicon-On-Insulator

Fully Depleted Silicon-On-Insulator
  • Author : Sorin Cristoloveanu
  • Publisher : Elsevier
  • Release : 01 August 2021
GET THIS BOOKFully Depleted Silicon-On-Insulator

Fully Depleted Silicon-On-Insulators: FD-SOI Devices, Mechanisms and Characterization Techniques presents an in-depth introduction to the key concepts of this increasingly important and advanced technology. The book covers FinFETs and Fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency and internet-of-things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on silicon-on-insulator materials and devices, this book will cover exhaustively the FD-SOI domain. It is based on the expertise

Silicon-on-Insulator Technology and Devices 13

Silicon-on-Insulator Technology and Devices 13
  • Author : George K. Celler,Sorin Cristoloveanu
  • Publisher : The Electrochemical Society
  • Release : 01 January 2007
GET THIS BOOKSilicon-on-Insulator Technology and Devices 13

This issue of ESC Transactions covers recent significant advances in SOI technologies. It will be of interest to materials and device scientists, as well as to process and applications oriented engineers. Several keynote papers introduce and review the main topics. This is followed by contributed papers covering the latest research and implementation results.

Silicon-On-Insulator (SOI) Technology

Silicon-On-Insulator (SOI) Technology
  • Author : O. Kononchuk,B.-Y. Nguyen
  • Publisher : Elsevier
  • Release : 19 June 2014
GET THIS BOOKSilicon-On-Insulator (SOI) Technology

Silicon-On-Insulator (SOI) Technology: Manufacture and Applications covers SOI transistors and circuits, manufacture, and reliability. The book also looks at applications such as memory, power devices, and photonics. The book is divided into two parts; part one covers SOI materials and manufacture, while part two covers SOI devices and applications. The book begins with chapters that introduce techniques for manufacturing SOI wafer technology, the electrical properties of advanced SOI materials, and modeling short-channel SOI semiconductor transistors. Both partially depleted and fully

Low-Dose Low-Energy SIMOX for Fully-Depleted Silicon-on-Insulator

Low-Dose Low-Energy SIMOX for Fully-Depleted Silicon-on-Insulator
  • Author : Maria Anc,Ibis technology corp danvers ma
  • Publisher : Unknown Publisher
  • Release : 28 October 1998
GET THIS BOOKLow-Dose Low-Energy SIMOX for Fully-Depleted Silicon-on-Insulator

This Phase I program examined formation of low dose low-energy SIMOX utilizing the extraction voltage of 65 keV. The dose of 2E17 was found to be within the low dose process window at 65 keV. Samples of high structural and electrical quality were obtained with this dose. The intrinsic breakdown field of 4-6 Mv/cm, silicon defect density on the order of 1E5/sq cm, surface microroughness less than 2A were measured in these samples. The feasibility of the ultra-thin layer SIMOX

Device Design of Sub-100nm Fully-depleted Silicon-on-Insulator (SOI) Devices Based on High-k Epitaxial-Buried Oxide

Device Design of Sub-100nm Fully-depleted Silicon-on-Insulator (SOI) Devices Based on High-k Epitaxial-Buried Oxide
  • Author : Anonim
  • Publisher : Unknown Publisher
  • Release : 28 October 2021
GET THIS BOOKDevice Design of Sub-100nm Fully-depleted Silicon-on-Insulator (SOI) Devices Based on High-k Epitaxial-Buried Oxide

The Integrated Circuit industry is driven by the continuously shrinking feature size of devices. The era of planar bulk MOS transistor, however, is nearing its end. The performance of bulk MOS transistor is severely degraded by short channel effects in the sub-65nm regime. In such a scenario, the Silicon-on-Insulator (SOI) technology looks set to become the next driver of CMOS scaling. SOI has been proved capable of providing increased transistor speed, reduced power consumption and enhanced device scalability as