Germanium Based Technologies

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. State-of-the-art information available for the first time as an all-in-source Extensive reference list making it an indispensable reference book Broad coverage from fundamental aspects up to industrial applications

Produk Detail:

  • Author : Cor Claeys
  • Publisher : Elsevier
  • Pages : 480 pages
  • ISBN : 9780080474908
  • Rating : 4.5/5 from 2 reviews
CLICK HERE TO GET THIS BOOKGermanium Based Technologies

Germanium-Based Technologies

Germanium-Based Technologies
  • Author : Cor Claeys,Eddy Simoen
  • Publisher : Elsevier
  • Release : 28 July 2011
GET THIS BOOKGermanium-Based Technologies

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the

Metal Impurities in Silicon- and Germanium-Based Technologies

Metal Impurities in Silicon- and Germanium-Based Technologies
  • Author : Cor Claeys,Eddy Simoen
  • Publisher : Springer
  • Release : 13 August 2018
GET THIS BOOKMetal Impurities in Silicon- and Germanium-Based Technologies

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary

Metal Impurities in Silicon- and Germanium-based Technologies

Metal Impurities in Silicon- and Germanium-based Technologies
  • Author : Cor L. Claeys,Eddy Simoen
  • Publisher : Unknown Publisher
  • Release : 17 October 2021
GET THIS BOOKMetal Impurities in Silicon- and Germanium-based Technologies

This book gives a unique review of different aspects of metallic contaminations in Si and Ge-based semiconductors. All important metals are discussed including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on the electrical device performance. Several control and possible gettering approaches are addressed. The book is a reference for researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. It has an interdisciplinary nature by combining

SiGe and Ge

SiGe and Ge
  • Author : David Louis Harame
  • Publisher : The Electrochemical Society
  • Release : 01 January 2006
GET THIS BOOKSiGe and Ge

The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

Extended Defects in Germanium

Extended Defects in Germanium
  • Author : Cor Claeys,Eddy Simoen
  • Publisher : Springer
  • Release : 30 November 2010
GET THIS BOOKExtended Defects in Germanium

The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the

Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology

Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology
  • Author : Dietmar Kissinger
  • Publisher : Springer Science & Business Media
  • Release : 08 March 2012
GET THIS BOOKMillimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology

The book presents the analysis and design of integrated automotive radar receivers in Silicon-Germanium technology, for use in complex multi-channel radar transceiver front-ends in the 77GHz frequency band. The main emphasis of the work is the realization of high-linearity and low-power modular receiver channels as well as the investigation of millimeter-wave integrated test concepts for the receiver front-end.

Physics and Technology of High-k Materials 8

Physics and Technology of High-k Materials 8
  • Author : S. Kar
  • Publisher : The Electrochemical Society
  • Release : 01 October 2010
GET THIS BOOKPhysics and Technology of High-k Materials 8

The issue of ECS Transactions will cover comprehensively all the aspects of high-k material physics and technology: Diverse High Mobility Substrates, High-k Materials, Metal Gate Electrode Materials, Deposition Techniques, Bulk Material Properties, Flat-Band Voltage Issues and Control, Interfaces, Gate Stack Reliability, Electrical, Chemical, and Physical Chatracterization, Novel Applications, High-k and Diverse Insulators for Photonics, High-k Processing/ Manufacturing.

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices
  • Author : David Harame
  • Publisher : The Electrochemical Society
  • Release : 17 October 2021
GET THIS BOOKSiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices

Advanced semiconductor technology is depending on innovation and less on "classical" scaling. SiGe, Ge, and Related Compounds have become a key component of the arsenal in improving semiconductor performance. This issue of ECS Transactions discusses the technology to form these materials, process them, FET devices incorporating them, Surfaces and Interfaces, Optoelectronic devices, and HBT devices.

Advanced Material and Device Applications with Germanium

Advanced Material and Device Applications with Germanium
  • Author : Sanghyun Lee
  • Publisher : BoD – Books on Demand
  • Release : 03 October 2018
GET THIS BOOKAdvanced Material and Device Applications with Germanium

Germanium is an elemental semiconductor, which played an important role in the birth of the semiconductor but soon was replaced with silicon. However, germanium is poised to make a remarkable comeback in the semiconductor industry. With this increasing attention, this book describes the fundamental aspects of germanium and its applications. The contributing authors are experts in their field with great in-depth knowledge. The authors strongly feel that this contribution might be of interest to readers and help to expand the

Silicon, Germanium, and Their Alloys

Silicon, Germanium, and Their Alloys
  • Author : Gudrun Kissinger,Sergio Pizzini
  • Publisher : CRC Press
  • Release : 09 December 2014
GET THIS BOOKSilicon, Germanium, and Their Alloys

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting

Strain-Engineered MOSFETs

Strain-Engineered MOSFETs
  • Author : C.K. Maiti,T.K. Maiti
  • Publisher : CRC Press
  • Release : 03 October 2018
GET THIS BOOKStrain-Engineered MOSFETs

Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS

Advances in Microelectronics: Reviews, Vol. 2

Advances in Microelectronics: Reviews, Vol. 2
  • Author : Sergey Yurish
  • Publisher : Lulu.com
  • Release : 06 August 2019
GET THIS BOOKAdvances in Microelectronics: Reviews, Vol. 2

The 2nd volume of 'Advances in Microelectronics: Reviews' Book Series is written by 57 contributors from academy and industry from 11 countries (Bulgaria, Hungary, Iran, Japan, Malaysia, Romania, Russia, Slovak Republic, Spain, Ukraine and USA). The book contains 13 chapters from different areas of microelectronics: MEMS, materials characterization, and various microelectronic devices. With unique combination of information in each volume, the Book Series will be of value for scientists and engineers in industry and at universities. Each of chapter is ending by well