Germanium Based Technologies

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. State-of-the-art information available for the first time as an all-in-source Extensive reference list making it an indispensable reference book Broad coverage from fundamental aspects up to industrial applications

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  • Author : Cor Claeys
  • Publisher : Elsevier
  • Pages : 480 pages
  • ISBN : 9780080474908
  • Rating : 4.5/5 from 2 reviews
CLICK HERE TO GET THIS BOOKGermanium Based Technologies

Germanium-Based Technologies

Germanium-Based Technologies
  • Author : Cor Claeys,Eddy Simoen
  • Publisher : Elsevier
  • Release : 28 July 2011
GET THIS BOOKGermanium-Based Technologies

Germanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the

Metal Impurities in Silicon- and Germanium-Based Technologies

Metal Impurities in Silicon- and Germanium-Based Technologies
  • Author : Cor Claeys,Eddy Simoen
  • Publisher : Springer
  • Release : 13 August 2018
GET THIS BOOKMetal Impurities in Silicon- and Germanium-Based Technologies

This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary

SiGe and Ge

SiGe and Ge
  • Author : David Louis Harame
  • Publisher : The Electrochemical Society
  • Release : 01 January 2006
GET THIS BOOKSiGe and Ge

The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

Extended Defects in Germanium

Extended Defects in Germanium
  • Author : Cor Claeys,Eddy Simoen
  • Publisher : Springer Science & Business Media
  • Release : 29 December 2008
GET THIS BOOKExtended Defects in Germanium

The aim is to give an overview of the physics of extended defects in Germanium, i.e. dislocations (line defects), grain boundaries, stacking faults, twins and {311} defects (two-dimensional defects) and precipitates, bubbles, etc. The first part covers fundamentals, describing the crystallographic structure and other physical and electrical properties, mainly of dislocations. Since dislocations are essential for the plastic deformation of Germanium, methods for analysis and imaging of dislocations and to evaluate their structure are described. Attention is given to the

Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology

Millimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology
  • Author : Dietmar Kissinger
  • Publisher : Springer Science & Business Media
  • Release : 09 March 2012
GET THIS BOOKMillimeter-Wave Receiver Concepts for 77 GHz Automotive Radar in Silicon-Germanium Technology

The book presents the analysis and design of integrated automotive radar receivers in Silicon-Germanium technology, for use in complex multi-channel radar transceiver front-ends in the 77GHz frequency band. The main emphasis of the work is the realization of high-linearity and low-power modular receiver channels as well as the investigation of millimeter-wave integrated test concepts for the receiver front-end.

Radiation Effects in Advanced Semiconductor Materials and Devices

Radiation Effects in Advanced Semiconductor Materials and Devices
  • Author : C. Claeys,Eddy Simoen
  • Publisher : Springer Science & Business Media
  • Release : 21 August 2002
GET THIS BOOKRadiation Effects in Advanced Semiconductor Materials and Devices

As microprocessors shrink in size, there is a growing need to understand and combat potential radiation damage problems. Space applications are an obvious case, but, beyond that, today's device and circuit fabrication rely on an increasing number of processing steps that involve a perilous environment where inadvertent radiation damage can occur. This book is aimed at researchers seeking an overview of the field and nuclear, space, and process engineers. Background knowledge of semiconductor and device physics is assumed, but the

SiGe Based Technologies

SiGe Based Technologies
  • Author : Y. Shiraki,T.P. Pearsall,E. Kasper
  • Publisher : Elsevier
  • Release : 18 February 1993
GET THIS BOOKSiGe Based Technologies

The preparation of silicon germanium microstructures, their physical, chemical and electrical characterization, and their device processing and application are reviewed in this book. Special emphasis is given to ultrathin Si/Ge superlattices. Topics covered include: Wafer preparation and epitaxial growth; surface effects driven phenomena, such as clustering, segregation, 'surfactants'; Analysis, both in situ and ex situ; Strain adjustment methods; High quality buffers; Modification of material properties by quantum wells and superlattices; Devices: Novel concepts, processing, modelling, demonstrators. The questions highlighted,

Silicon, Germanium, and Their Alloys

Silicon, Germanium, and Their Alloys
  • Author : Gudrun Kissinger,Sergio Pizzini
  • Publisher : CRC Press
  • Release : 09 December 2014
GET THIS BOOKSilicon, Germanium, and Their Alloys

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting

High Mobility and Quantum Well Transistors

High Mobility and Quantum Well Transistors
  • Author : Geert Hellings,Kristin De Meyer
  • Publisher : Springer Science & Business Media
  • Release : 25 March 2013
GET THIS BOOKHigh Mobility and Quantum Well Transistors

For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices
  • Author : Zhiqiang Li
  • Publisher : Springer
  • Release : 24 March 2016
GET THIS BOOKThe Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain

Current Trends in Heterojunction Bipolar Transistors

Current Trends in Heterojunction Bipolar Transistors
  • Author : M. F. Chang
  • Publisher : World Scientific
  • Release : 26 February 1996
GET THIS BOOKCurrent Trends in Heterojunction Bipolar Transistors

Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in

Noise and Fluctuations

Noise and Fluctuations
  • Author : Massimo Macucci,Giovanni Basso
  • Publisher : American Institute of Physics
  • Release : 13 May 2009
GET THIS BOOKNoise and Fluctuations

The ICNF conference is a biennial event that brings together researchers interested in theoretical and experimental aspects of fluctuations across a wide spectrum of scientific and technological fields, ranging from heartbeat analysis to mesoscopic phsyics, to noise optimization of electron devices, to the variations of stock prices.

Applications of Silicon-Germanium Heterostructure Devices

Applications of Silicon-Germanium Heterostructure Devices
  • Author : C.K Maiti,G.A Armstrong
  • Publisher : CRC Press
  • Release : 20 July 2001
GET THIS BOOKApplications of Silicon-Germanium Heterostructure Devices

The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

Advanced Material and Device Applications with Germanium

Advanced Material and Device Applications with Germanium
  • Author : Sanghyun Lee
  • Publisher : BoD – Books on Demand
  • Release : 03 October 2018
GET THIS BOOKAdvanced Material and Device Applications with Germanium

Germanium is an elemental semiconductor, which played an important role in the birth of the semiconductor but soon was replaced with silicon. However, germanium is poised to make a remarkable comeback in the semiconductor industry. With this increasing attention, this book describes the fundamental aspects of germanium and its applications. The contributing authors are experts in their field with great in-depth knowledge. The authors strongly feel that this contribution might be of interest to readers and help to expand the