Internal Photoemission Spectroscopy

The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces in novel materials are covered as well. Internal photoemission involves the physics of charge carrier photoemission from one solid to another, and different spectroscopic applications of this phenomenon to solid state heterojunctions. This technique complements conventional external photoemission spectroscopy by analyzing interfaces separated from the sample surface by a layer of a different solid or liquid. Internal photoemission provides the most straightforward, reliable information regarding the energy spectrum of electron states at interfaces. At the same time, the method enables the analysis of heterostructures relevant to modern micro- and nano-electronic devices as well as new materials involved in their design and fabrication. First complete model description of the internal photoemission phenomena Overview of the most reliable energy barrier determination procedures and trap characterization methods Overview of the most recent results on band structure of high-permittivity insulating materials and their interfaces with semiconductors and metals

Produk Detail:

  • Author : Valeri V. Afanas'ev
  • Publisher : Elsevier
  • Pages : 404 pages
  • ISBN : 0080999301
  • Rating : 4/5 from 21 reviews
CLICK HERE TO GET THIS BOOKInternal Photoemission Spectroscopy

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
  • Author : Valeri V. Afanas'ev
  • Publisher : Elsevier
  • Release : 22 February 2014
GET THIS BOOKInternal Photoemission Spectroscopy

The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
  • Author : Valeri V. Afanas'ev
  • Publisher : Elsevier
  • Release : 07 July 2010
GET THIS BOOKInternal Photoemission Spectroscopy

The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
  • Author : V. V. Afanasʹev
  • Publisher : Elsevier Science Limited
  • Release : 24 May 2022
GET THIS BOOKInternal Photoemission Spectroscopy

The monographic book addresses the basics of the charge carrier photoemission from one solid to another - the internal photoemission, (IPE) - and different spectroscopic applications of this phenomenon to solid state heterojunctions. This is the first book in the field of IPE, which complements the conventional external photoemission spectroscopy by analysing interfaces separated from the sample surface by a layer of a different solid or liquid. IPE is providing the most straightforward and, therefore, reliable information regarding the energy

Advanced Gate Stacks for High-Mobility Semiconductors

Advanced Gate Stacks for High-Mobility Semiconductors
  • Author : Athanasios Dimoulas,Evgeni Gusev,Paul C. McIntyre,Marc Heyns
  • Publisher : Springer Science & Business Media
  • Release : 01 January 2008
GET THIS BOOKAdvanced Gate Stacks for High-Mobility Semiconductors

This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Metrology and Diagnostic Techniques for Nanoelectronics

Metrology and Diagnostic Techniques for Nanoelectronics
  • Author : Zhiyong Ma,David G. Seiler
  • Publisher : CRC Press
  • Release : 27 March 2017
GET THIS BOOKMetrology and Diagnostic Techniques for Nanoelectronics

Nanoelectronics is changing the way the world communicates, and is transforming our daily lives. Continuing Moore’s law and miniaturization of low-power semiconductor chips with ever-increasing functionality have been relentlessly driving R&D of new devices, materials, and process capabilities to meet performance, power, and cost requirements. This book covers up-to-date advances in research and industry practices in nanometrology, critical for continuing technology scaling and product innovation. It holistically approaches the subject matter and addresses emerging and important topics in

High-k Gate Dielectrics for CMOS Technology

High-k Gate Dielectrics for CMOS Technology
  • Author : Gang He,Zhaoqi Sun
  • Publisher : John Wiley & Sons
  • Release : 10 August 2012
GET THIS BOOKHigh-k Gate Dielectrics for CMOS Technology

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors, from both a fundamental and a technological viewpoint, summarizing the latest research results and development solutions. As such, the book clearly discusses the advantages of these materials over conventional materials and also addresses the issues that accompany their integration into existing production technologies. Aimed at academia and industry alike, this monograph combines introductory parts for newcomers to the field as well as advanced sections with directly applicable solutions for

Springer Handbook of Electronic and Photonic Materials

Springer Handbook of Electronic and Photonic Materials
  • Author : Safa Kasap,Peter Capper
  • Publisher : Springer
  • Release : 04 October 2017
GET THIS BOOKSpringer Handbook of Electronic and Photonic Materials

The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories.

Silicon Carbide

Silicon Carbide
  • Author : Wolfgang J. Choyke,Hiroyuki Matsunami,Gerhard Pensl
  • Publisher : Springer Science & Business Media
  • Release : 17 April 2013
GET THIS BOOKSilicon Carbide

Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on

Electronic Properties of Semiconductor Interfaces

Electronic Properties of Semiconductor Interfaces
  • Author : Winfried Mönch
  • Publisher : Springer Science & Business Media
  • Release : 17 April 2013
GET THIS BOOKElectronic Properties of Semiconductor Interfaces

Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be

Wide-Gap Chalcopyrites

Wide-Gap Chalcopyrites
  • Author : Susanne Siebentritt,Uwe Rau
  • Publisher : Springer Science & Business Media
  • Release : 25 February 2006
GET THIS BOOKWide-Gap Chalcopyrites

Chalcopyrites, in particular those with a wide band gap, are fascinating materials in terms of their technological potential in the next generation of thin-film solar cells and in terms of their basic material properties. They exhibit uniquely low defect formation energies, leading to unusual doping and phase behavior and to extremely benign grain boundaries. This book collects articles on a number of those basic material properties of wide-gap chalcopyrites, comparing them to their low-gap cousins. They explore the doping of

Silicides: Fundamentals and Applications

Silicides: Fundamentals and Applications
  • Author : Leo Miglio,Francois d'Heurle
  • Publisher : World Scientific
  • Release : 18 December 2000
GET THIS BOOKSilicides: Fundamentals and Applications

Silicides were introduced into the technology of electronic devices some thirty years ago; since then, they have been continuously used to form both ohmic and rectifying contacts to silicon. Silicides are also important for other applications (thermoelectric devices and structural applications, such as jet engines), but it is not easy to find an updated reference containing both their basic properties, either chemical or physical, and the latest applications. The 16th Course of the International School of Solid State Physics, held