Molecular Beam Epitaxy

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. Condenses the fundamental science of MBE into a modern reference, speeding up literature review Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

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  • Author : Mohamed Henini
  • Publisher : Elsevier
  • Pages : 788 pages
  • ISBN : 0128121378
  • Rating : 4/5 from 21 reviews
CLICK HERE TO GET THIS BOOKMolecular Beam Epitaxy

Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : Mohamed Henini
  • Publisher : Elsevier
  • Release : 27 June 2018
GET THIS BOOKMolecular Beam Epitaxy

Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and ‘how to’ on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new

Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : Hajime Asahi,Yoshiji Horikoshi
  • Publisher : Wiley
  • Release : 22 April 2019
GET THIS BOOKMolecular Beam Epitaxy

Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE;

Materials Fundamentals of Molecular Beam Epitaxy

Materials Fundamentals of Molecular Beam Epitaxy
  • Author : Jeffrey Y. Tsao
  • Publisher : Academic Press
  • Release : 02 December 2012
GET THIS BOOKMaterials Fundamentals of Molecular Beam Epitaxy

The technology of crystal growth has advanced enormously during the past two decades. Among, these advances, the development and refinement of molecular beam epitaxy (MBE) has been among the msot important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today they form the basis for the most advanced device structures in solid-state physics, electronics, and optoelectronics. As an example, Figure 0.1 shows a vertical-cavity surface emitting laser structure grown by MBE. * Provides comprehensive

Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : Robin F.C. Farrow
  • Publisher : Elsevier
  • Release : 31 December 1995
GET THIS BOOKMolecular Beam Epitaxy

In this volume, the editor and contributors describe the use of molecular beam epitaxy (MBE) for a range of key materials systems that are of interest for both technological and fundamental reasons. Prior books on MBE have provided an introduction to the basic concepts and techniques of MBE and emphasize growth and characterization of GaAs-based structures. The aim in this book is somewhat different; it is to demonstrate the versatility of the technique by showing how it can be utilized

Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : Marian A. Herman,Helmut Sitter
  • Publisher : Springer Science & Business Media
  • Release : 08 March 2013
GET THIS BOOKMolecular Beam Epitaxy

This first-ever monograph on molecular beam epitaxy (MBE) gives a comprehensive presentation of recent developments in MBE, as applied to crystallization of thin films and device structures of different semiconductor materials. MBE is a high-vacuum technology characterized by relatively low growth temperature, ability to cease or initiate growth abruptly, smoothing of grown surfaces and interfaces on an atomic scale, and the unique facility for in situ analysis of the structural parameters of the growing film. The excellent exploitation parameters of

Molecular Beam Epitaxy and Heterostructures

Molecular Beam Epitaxy and Heterostructures
  • Author : L.L. Chang,K. Ploog
  • Publisher : Springer Science & Business Media
  • Release : 06 December 2012
GET THIS BOOKMolecular Beam Epitaxy and Heterostructures

The NATO Advanced Study Institute on "Molecular Beam Epitaxy (MBE) and Heterostructures" was held at the Ettore Majorana Center for Scientific Culture, Erice, Italy, on March 7-19, 1983, the second course of the International School of Solid-State Device Re search. This volume contains the lectures presented at the Institute. Throughout the history of semiconductor development, the coupling between processing techniques and device structures for both scientific investigations and technological applications has time and again been demonstrated. Newly conceived ideas usually demand

Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : John Wilfred Orton,Tom Foxon
  • Publisher : Oxford University Press, USA
  • Release : 20 May 2022
GET THIS BOOKMolecular Beam Epitaxy

The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were

Molecular Beam Epitaxy

Molecular Beam Epitaxy
  • Author : Brian R. Pamplin
  • Publisher : Elsevier
  • Release : 22 October 2013
GET THIS BOOKMolecular Beam Epitaxy

Molecular Beam Epitaxy introduces the reader to the use of molecular beam epitaxy (MBE) in the generation of III-V and IV-VI compounds and alloys and describes the semiconductor and integrated optics reasons for using the technique. Topics covered include semiconductor superlattices by MBE; design considerations for MBE systems; periodic doping structure in gallium arsenide (GaAs); nonstoichiometry and carrier concentration control in MBE of compound semiconductors; and MBE techniques for IV-VI optoelectronic devices. The use of MBE to fabricate integrated optical

Gas Source Molecular Beam Epitaxy

Gas Source Molecular Beam Epitaxy
  • Author : Morton B. Panish,Henryk Temkin
  • Publisher : Springer Science & Business Media
  • Release : 07 March 2013
GET THIS BOOKGas Source Molecular Beam Epitaxy

The first book to present a unified treatment of hybrid source MBE and metalorganic MBE. Since metalorganic MBE permits selective area growth, the latest information on its application to the INP/GaInAs(P) system is presented. This system has been highlighted because it is one of rising importance, vital to optical communications systems, and has great potential for future ultra-highspeed electronics. The use of such analytical methods as high resolution x-ray diffraction, secondary ion mass spectroscopy, several photoluminescence methods, and

RHEED Transmission Mode and Pole Figures

RHEED Transmission Mode and Pole Figures
  • Author : Gwo-Ching Wang,Toh-Ming Lu
  • Publisher : Springer Science & Business Media
  • Release : 11 December 2013
GET THIS BOOKRHEED Transmission Mode and Pole Figures

This unique book covers the fundamental principle of electron diffraction, basic instrumentation of RHEED, definitions of textures in thin films and nanostructures, mechanisms and control of texture formation, and examples of RHEED transmission mode measurements of texture and texture evolution of thin films and nanostructures. Also presented is a new application of RHEED in the transmission mode called RHEED pole figure technique that can be used to monitor the texture evolution in thin film growth and nanostructures and is not

Optoelectronic Devices

Optoelectronic Devices
  • Author : M Razeghi,Mohamed Henini
  • Publisher : Elsevier
  • Release : 20 May 2022
GET THIS BOOKOptoelectronic Devices

Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic

Crystal Growth in Science and Technology

Crystal Growth in Science and Technology
  • Author : H. Arend,J. Hulliger
  • Publisher : Springer Science & Business Media
  • Release : 06 December 2012
GET THIS BOOKCrystal Growth in Science and Technology

Science and art of crystal growth represent an interdisciplinary activity based on fundamental principles of physics, chemistry and crystallography. Crystal growth has contributed over the years essentially to a widening of knowledge in its basic disciplines and has penetrated practically into all fields of experimental natural sciences. It has acted, more over, in a steadily increasing manner as a link between science and technology as can be seen best, for example, from the achievements in modern microelectronics. The aim of

Epitaxial Growth of Complex Metal Oxides

Epitaxial Growth of Complex Metal Oxides
  • Author : Gertjan Koster,M Huijben,Guus Rijnders
  • Publisher : Elsevier
  • Release : 14 May 2015
GET THIS BOOKEpitaxial Growth of Complex Metal Oxides

The atomic arrangement and subsequent properties of a material are determined by the type and conditions of growth leading to epitaxy, making control of these conditions key to the fabrication of higher quality materials. Epitaxial Growth of Complex Metal Oxides reviews the techniques involved in such processes and highlights recent developments in fabrication quality which are facilitating advances in applications for electronic, magnetic and optical purposes. Part One reviews the key techniques involved in the epitaxial growth of complex metal

Lead Chalcogenides

Lead Chalcogenides
  • Author : D. Khokhlov
  • Publisher : Routledge
  • Release : 17 December 2021
GET THIS BOOKLead Chalcogenides

Lead Chalcogenides remain one of the basic materials of modern infrared optoelectronics. This volume presents the properties of lead chalcogenides, including the basic physical features, the bulk and epitaxial growth technique, and the 2-D physics of lead chalcogenide-based structures. In addition, the theoretical appraoches for band structure and impurity state calculations are reviewed.

Chemical Beam Epitaxy and Related Techniques

Chemical Beam Epitaxy and Related Techniques
  • Author : John S. Foord,G. J. Davies,W. T. Tsang
  • Publisher : John Wiley & Sons Incorporated
  • Release : 08 December 1997
GET THIS BOOKChemical Beam Epitaxy and Related Techniques

Chemical Beam Epitaxy (CBE), is a powerful growth technique which has come to prominence over the last ten years. Together with the longer established molecular beam epitaxy (MBE) and metal organic vapour phase epitaxy (MOVPE), CBE provides a capability for the epitaxial growth of semiconductor and other advanced materials with control at the atomic limit. This, the first book dedicated to CBE, and closely related techniques comprises chapters by leading research workers in the field and provides a detailed overview