Nanomaterials Based Charge Trapping Memory Devices

Rising consumer demand for low power consumption electronics has generated a need for scalable and reliable memory devices with low power consumption. At present, scaling memory devices and lowering their power consumption is becoming more difficult due to unresolved challenges, such as short channel effect, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effect, all of which cause high leakage currents. As a result, the introduction of different memory architectures or materials is crucial. Nanomaterials-based Charge Trapping Memory Devices provides a detailed explanation of memory device operation and an in-depth analysis of the requirements of future scalable and low powered memory devices in terms of new materials properties. The book presents techniques to fabricate nanomaterials with the desired properties. Finally, the book highlights the effect of incorporating such nanomaterials in memory devices. This book is an important reference for materials scientists and engineers, who are looking to develop low-powered solutions to meet the growing demand for consumer electronic products and devices. Explores in depth memory device operation, requirements and challenges Presents fabrication methods and characterization results of new nanomaterials using techniques, including laser ablation of nanoparticles, ALD growth of nano-islands, and agglomeration-based technique of nanoparticles Demonstrates how nanomaterials affect the performance of memory devices

Produk Detail:

  • Author : Ammar Nayfeh
  • Publisher : Elsevier
  • Pages : 192 pages
  • ISBN : 012822343X
  • Rating : 4/5 from 21 reviews
CLICK HERE TO GET THIS BOOKNanomaterials Based Charge Trapping Memory Devices

Nanomaterials-Based Charge Trapping Memory Devices

Nanomaterials-Based Charge Trapping Memory Devices
  • Author : Ammar Nayfeh,Nazek El-Atab
  • Publisher : Elsevier
  • Release : 27 May 2020
GET THIS BOOKNanomaterials-Based Charge Trapping Memory Devices

Rising consumer demand for low power consumption electronics has generated a need for scalable and reliable memory devices with low power consumption. At present, scaling memory devices and lowering their power consumption is becoming more difficult due to unresolved challenges, such as short channel effect, Drain Induced Barrier Lowering (DIBL), and sub-surface punch-through effect, all of which cause high leakage currents. As a result, the introduction of different memory architectures or materials is crucial. Nanomaterials-based Charge Trapping Memory Devices provides

Charge-Trapping Non-Volatile Memories

Charge-Trapping Non-Volatile Memories
  • Author : Panagiotis Dimitrakis
  • Publisher : Springer
  • Release : 14 February 2017
GET THIS BOOKCharge-Trapping Non-Volatile Memories

This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks.

Electrical Memory Materials and Devices

Electrical Memory Materials and Devices
  • Author : Wen-Chang Chen
  • Publisher : Royal Society of Chemistry
  • Release : 16 October 2015
GET THIS BOOKElectrical Memory Materials and Devices

Information technology is essential to our daily life, and the limitations of silicone based memory systems mean a growing amount of research is focussed on finding an inexpensive alternative to meet our needs and allow the continued development of the industry. Inorganic silicone based technology is increasingly costly and complex and is physically limited by the problems of scaling down. Organic electrical memory devices are comparatively low cost, offer flexibility in terms of chemical structure, are compatible with flexible substrates

Advances in Non-volatile Memory and Storage Technology

Advances in Non-volatile Memory and Storage Technology
  • Author : Yoshio Nishi
  • Publisher : Elsevier
  • Release : 24 June 2014
GET THIS BOOKAdvances in Non-volatile Memory and Storage Technology

New solutions are needed for future scaling down of nonvolatile memory. Advances in Non-volatile Memory and Storage Technology provides an overview of developing technologies and explores their strengths and weaknesses. After an overview of the current market, part one introduces improvements in flash technologies, including developments in 3D NAND flash technologies and flash memory for ultra-high density storage devices. Part two looks at the advantages of designing phase change memory and resistive random access memory technologies. It looks in particular

Physics of Semiconductor Devices

Physics of Semiconductor Devices
  • Author : Simon M. Sze,Yiming Li,Kwok K. Ng
  • Publisher : John Wiley & Sons
  • Release : 03 March 2021
GET THIS BOOKPhysics of Semiconductor Devices

The new edition of the most detailed and comprehensive single-volume reference on major semiconductor devices The Fourth Edition of Physics of Semiconductor Devices remains the standard reference work on the fundamental physics and operational characteristics of all major bipolar, unipolar, special microwave, and optoelectronic devices. This fully updated and expanded edition includes approximately 1,000 references to original research papers and review articles, more than 650 high-quality technical illustrations, and over two dozen tables of material parameters. Divided into five parts, the text

Flash Memories

Flash Memories
  • Author : Paulo Cappelletti,Carla Golla,Piero Olivo,Enrico Zanoni
  • Publisher : Springer Science & Business Media
  • Release : 27 November 2013
GET THIS BOOKFlash Memories

A Flash memory is a Non Volatile Memory (NVM) whose "unit cells" are fabricated in CMOS technology and programmed and erased electrically. In 1971, Frohman-Bentchkowsky developed a folating polysilicon gate tran sistor [1, 2], in which hot electrons were injected in the floating gate and removed by either Ultra-Violet (UV) internal photoemission or by Fowler Nordheim tunneling. This is the "unit cell" of EPROM (Electrically Pro grammable Read Only Memory), which, consisting of a single transistor, can be very densely integrated. EPROM memories

Titanium Dioxide (TiO2) and Its Applications

Titanium Dioxide (TiO2) and Its Applications
  • Author : Francesco Parrino,Leonardo Palmisano
  • Publisher : Elsevier
  • Release : 29 November 2020
GET THIS BOOKTitanium Dioxide (TiO2) and Its Applications

Scientific interest in TiO2-based materials has exponentially grown in the last few decades. Titanium Dioxide (TiO2) and Its Applications introduces the main physicochemical properties of TiO2 which are the basis of its applications in various fields. While the basic principles of the TiO2 properties have been the subject of various previous publications, this book is mainly devoted to TiO2 applications. The book includes contributions written by experts from a wide range of disciplines in order to address titanium dioxide's

3D Flash Memories

3D Flash Memories
  • Author : Rino Micheloni
  • Publisher : Springer
  • Release : 26 May 2016
GET THIS BOOK3D Flash Memories

This book walks the reader through the next step in the evolution of NAND flash memory technology, namely the development of 3D flash memories, in which multiple layers of memory cells are grown within the same piece of silicon. It describes their working principles, device architectures, fabrication techniques and practical implementations, and highlights why 3D flash is a brand new technology. After reviewing market trends for both NAND and solid state drives (SSDs), the book digs into the details of

Memories for the Intelligent Internet of Things

Memories for the Intelligent Internet of Things
  • Author : Betty Prince,David Prince
  • Publisher : John Wiley & Sons
  • Release : 18 April 2018
GET THIS BOOKMemories for the Intelligent Internet of Things

A detailed, practical review of state-of-the-art implementations of memory in IoT hardware As the Internet of Things (IoT) technology continues to evolve and become increasingly common across an array of specialized and consumer product applications, the demand on engineers to design new generations of flexible, low-cost, low power embedded memories into IoT hardware becomes ever greater. This book helps them meet that demand. Coauthored by a leading international expert and multiple patent holder, this book gets engineers up to speed

Internal Photoemission Spectroscopy

Internal Photoemission Spectroscopy
  • Author : Valeri V. Afanas'ev
  • Publisher : Elsevier
  • Release : 22 February 2014
GET THIS BOOKInternal Photoemission Spectroscopy

The second edition of Internal Photoemission Spectroscopy thoroughly updates this vital, practical guide to internal photoemission (IPE) phenomena and measurements. The book's discussion of fundamental physical and technical aspects of IPE spectroscopic applications is supplemented by an extended overview of recent experimental results in swiftly advancing research fields. These include the development of insulating materials for advanced SiMOS technology, metal gate materials, development of heterostructures based on high-mobility semiconductors, and more. Recent results concerning the band structure of important interfaces

Memristor and Memristive Neural Networks

Memristor and Memristive Neural Networks
  • Author : Alex James
  • Publisher : BoD – Books on Demand
  • Release : 04 April 2018
GET THIS BOOKMemristor and Memristive Neural Networks

This book covers a range of models, circuits and systems built with memristor devices and networks in applications to neural networks. It is divided into three parts: (1) Devices, (2) Models and (3) Applications. The resistive switching property is an important aspect of the memristors, and there are several designs of this discussed in this book, such as in metal oxide/organic semiconductor nonvolatile memories, nanoscale switching and degradation of resistive random access memory and graphene oxide-based memristor. The modelling of the memristors

2D Materials

2D Materials
  • Author : Phaedon Avouris,Tony F. Heinz,Tony Low
  • Publisher : Cambridge University Press
  • Release : 29 June 2017
GET THIS BOOK2D Materials

Learn about the most recent advances in 2D materials with this comprehensive and accessible text. Providing all the necessary materials science and physics background, leading experts discuss the fundamental properties of a wide range of 2D materials, and their potential applications in electronic, optoelectronic and photonic devices. Several important classes of materials are covered, from more established ones such as graphene, hexagonal boron nitride, and transition metal dichalcogenides, to new and emerging materials such as black phosphorus, silicene, and germanene.