Silicon Germanium SiGe Nanostructures

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

Produk Detail:

  • Author : Y. Shiraki
  • Publisher : Elsevier
  • Pages : 656 pages
  • ISBN : 0857091425
  • Rating : 4/5 from 21 reviews
CLICK HERE TO GET THIS BOOKSilicon Germanium SiGe Nanostructures

Silicon-Germanium (SiGe) Nanostructures

Silicon-Germanium (SiGe) Nanostructures
  • Author : Y. Shiraki,N Usami
  • Publisher : Elsevier
  • Release : 26 February 2011
GET THIS BOOKSilicon-Germanium (SiGe) Nanostructures

Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy

Silicon-Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency

Silicon-Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency
  • Author : Jaime Andrés Pérez-Taborda
  • Publisher : Unknown Publisher
  • Release : 22 January 2021
GET THIS BOOKSilicon-Germanium (SiGe) Nanostructures for Thermoelectric Devices: Recent Advances and New Approaches to High Thermoelectric Efficiency

Silicon and germanium present distinct and interesting transport properties. However, composites made of silicon-germanium (SiGe) have resulted in a breakthrough in terms of their transport properties. Currently, these alloys are used in different applications, such as microelectronic devices and integrated circuits, photovoltaic cells, and thermoelectric applications. With respect to thermoelectricity, in the last decades, Si0.8Ge0.2 has attracted significant attention as an energy harvesting material, for powering space applications and other industrial applications. This chapter focuses on the recent advances

Quantum Optics with Semiconductor Nanostructures

Quantum Optics with Semiconductor Nanostructures
  • Author : Frank Jahnke
  • Publisher : Elsevier
  • Release : 16 July 2012
GET THIS BOOKQuantum Optics with Semiconductor Nanostructures

An understanding of the interaction between light and matter on a quantum level is of fundamental interest and has many applications in optical technologies. The quantum nature of the interaction has recently attracted great attention for applications of semiconductor nanostructures in quantum information processing. Quantum optics with semiconductor nanostructures is a key guide to the theory, experimental realisation, and future potential of semiconductor nanostructures in the exploration of quantum optics. Part one provides a comprehensive overview of single quantum dot

New Research on Silicon

New Research on Silicon
  • Author : Vitalyi Igorevich Talanin
  • Publisher : BoD – Books on Demand
  • Release : 31 May 2017
GET THIS BOOKNew Research on Silicon

The knowledge of fundamental silicon questions and all aspects of silicon technology gives the possibility of improvement to both initial silicon material and devices on silicon basis. The articles for this book have been contributed by the much respected researchers in this area and cover the most recent developments and applications of silicon technology and some fundamental questions. This book provides the latest research developments in important aspects of silicon including nanoclusters, solar silicon, porous silicon, some technological processes, and

Nanoelectronic Materials

Nanoelectronic Materials
  • Author : Loutfy H. Madkour
  • Publisher : Springer
  • Release : 27 June 2019
GET THIS BOOKNanoelectronic Materials

This book presents synthesis techniques for the preparation of low-dimensional nanomaterials including 0D (quantum dots), 1D (nanowires, nanotubes) and 2D (thin films, few layers), as well as their potential applications in nanoelectronic systems. It focuses on the size effects involved in the transition from bulk materials to nanomaterials; the electronic properties of nanoscale devices; and different classes of nanomaterials from microelectronics to nanoelectronics, to molecular electronics. Furthermore, it demonstrates the structural stability, physical, chemical, magnetic, optical, electrical, thermal, electronic and

Silicon, Germanium, and Their Alloys

Silicon, Germanium, and Their Alloys
  • Author : Gudrun Kissinger,Sergio Pizzini
  • Publisher : CRC Press
  • Release : 09 December 2014
GET THIS BOOKSilicon, Germanium, and Their Alloys

Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting

Properties of Silicon Germanium and SiGe:Carbon

Properties of Silicon Germanium and SiGe:Carbon
  • Author : Erich Kasper,Klara Lyutovich
  • Publisher : Inst of Engineering & Technology
  • Release : 22 January 2021
GET THIS BOOKProperties of Silicon Germanium and SiGe:Carbon

The industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited

Introduction to the Physics of Nanoelectronics

Introduction to the Physics of Nanoelectronics
  • Author : Seng Ghee Tan,Mansoor B. A Jalil
  • Publisher : Elsevier
  • Release : 28 March 2012
GET THIS BOOKIntroduction to the Physics of Nanoelectronics

This book provides an introduction to the physics of nanoelectronics, with a focus on the theoretical aspects of nanoscale devices. The book begins with an overview of the mathematics and quantum mechanics pertaining to nanoscale electronics, to facilitate the understanding of subsequent chapters. It goes on to encompass quantum electronics, spintronics, Hall effects, carbon and graphene electronics, and topological physics in nanoscale devices. Theoretical methodology is developed using quantum mechanical and non-equilibrium Green’s function (NEGF) techniques to calculate electronic

Nanotechnology for Electronics, Photonics, and Renewable Energy

Nanotechnology for Electronics, Photonics, and Renewable Energy
  • Author : Anatoli Korkin,Predrag S. Krstić,Jack C. Wells
  • Publisher : Springer Science & Business Media
  • Release : 14 December 2010
GET THIS BOOKNanotechnology for Electronics, Photonics, and Renewable Energy

Tutorial lectures given by world-renowned researchers have become one of the important traditions of the Nano and Giga Challenges (NGC) conference series. 1 Soon after preparations had begun for the rst forum, NGC2002, in Moscow, Russia, the organizers realized that publication of the lectures notes would be a va- able legacy of the meeting and a signi cant educational resource and knowledge base for students, young researchers, and senior experts. Our rst book was p- lished by Elsevier and received the

Physics and Chemistry of Luminescence Materials, W. M. Yen Memorial Symposium

Physics and Chemistry of Luminescence Materials, W. M. Yen Memorial Symposium
  • Author : Uwe Happek
  • Publisher : The Electrochemical Society
  • Release : 01 September 2009
GET THIS BOOKPhysics and Chemistry of Luminescence Materials, W. M. Yen Memorial Symposium

Topics covered during the Professor W.M. Yen Memorial Symposium included; 1) identification of luminescent centers, loss centers and non-radiative processes, 2) synthesis and characterization of novel phosphor materials, 3) persistent phosphor materials, 4) high energy (x-ray, gamma ray, cathode ray) excitation of luminescence, including scintillators, 5) electroluminescence, 6) luminescence from glasses, 7) theoretical analysis of luminescence phenomena, and 8) synthesis and characterization of luminescent nanoparticles.

Measurement and Modeling of Silicon Heterostructure Devices

Measurement and Modeling of Silicon Heterostructure Devices
  • Author : John D. Cressler
  • Publisher : CRC Press
  • Release : 03 October 2018
GET THIS BOOKMeasurement and Modeling of Silicon Heterostructure Devices

When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in