Thermal Management of Gallium Nitride Electronics

Electronic device performance has always been restricted by the heat generated during operation. Thermal management employed in mass-produced electronics has not been able to provide a high thermal conductivity path close to the heat generation source in a wide bandgap semiconductor device such as the Gallium Nitride high electron mobility transistor. Over the past 10 years, the authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts of integrating diamond and GaN have been reported by a number of groups since then, resulting in active thermal management options that do not necessarily lead to performance derating to avoid self-heating during radio frequency or power switching operation of these devices. Self-heating refers to the increased channel temperature caused by increased energy transfer from electrons to the lattice at high power. A number of research programs have attempted to solve this problem and bring integrated diamond heat spreaders into the world of mass-produced microelectronics. This book outlines the technical approaches undertaken by leaders in the community, as well as the challenges they have faced and the resulting advances in the field. The purpose of this book is to serve as a one-stop reference for compound semiconductor device researchers tasked with solving this engineering challenge for future material systems based on ultra-wide bandgap semiconductors. A number of perspectives are included such as; the growth methods of nanocrystalline diamond, the materials integration of polycrystalline diamond through wafer bonding, and the new physics of thermal transport across heterogeneous interfaces. The inclusion of all these aspects of diamond thermal management will help enable researchers to make the translation from the lab to the market. Includes fundamentals of thermal management of wide-bandgap semiconductors with historical context, review of common heating issues, thermal transport physics and characterization methods Reviews latest strategies to overcome heating issues through materials modelling, growth and device design strategies Touches on emerging real-world applications for thermal management strategies for power electronics

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  • Author : Marko Tadjer
  • Publisher : Woodhead Publishing
  • Pages : 525 pages
  • ISBN : 9780128210840
  • Rating : 4/5 from 21 reviews
CLICK HERE TO GET THIS BOOKThermal Management of Gallium Nitride Electronics

Thermal Management of Gallium Nitride Electronics

Thermal Management of Gallium Nitride Electronics
  • Author : Marko Tadjer,Travis J. Anderson
  • Publisher : Woodhead Publishing
  • Release : 15 March 2022
GET THIS BOOKThermal Management of Gallium Nitride Electronics

Electronic device performance has always been restricted by the heat generated during operation. Thermal management employed in mass-produced electronics has not been able to provide a high thermal conductivity path close to the heat generation source in a wide bandgap semiconductor device such as the Gallium Nitride high electron mobility transistor. Over the past 10 years, the authors have performed pioneering experiments in the integration of nanocrystalline diamond capping layers into the fabrication process of compound semiconductor devices. Significant research efforts

Characterization of Devices and Materials for Gallium Nitride and Diamond Thermal Management Applications

Characterization of Devices and Materials for Gallium Nitride and Diamond Thermal Management Applications
  • Author : Bobby Logan Hancock
  • Publisher : Unknown Publisher
  • Release : 19 October 2021
GET THIS BOOKCharacterization of Devices and Materials for Gallium Nitride and Diamond Thermal Management Applications

As trends progress toward higher power applications in GaN-based electronic and photonic devices, the issue of self-heating becomes a prominent concern. This is especially the case for high-brightness light-emitting diodes (LEDs) and high electron mobility transistors (HEMTs), where the bulk of power dissipation occurs within a small (sub-micron) region resulting in highly localized temperature rises during operation. Monitoring these thermal effects becomes critical as they significantly affect performance, reliability, and overall device lifetime. In response to these issues, diamond grown

Device-level Thermal Analysis of Gallium Nitride-based Electronics

Device-level Thermal Analysis of Gallium Nitride-based Electronics
  • Author : Kevin Robert Bagnall,Massachusetts Institute of Technology. Department of Mechanical Engineering
  • Publisher : Unknown Publisher
  • Release : 19 October 2021
GET THIS BOOKDevice-level Thermal Analysis of Gallium Nitride-based Electronics

Gallium nitride (GaN)-based microelectronics are one of the most exciting semiconductor technologies for high power density and high frequency electronics. The excellent electrical properties of GaN and its related alloys (high critical electric field, carrier concentration, and carrier mobility) have enabled record-breaking performance of GaN-based high electron mobility transistors (HEMTs) for radio-frequency (RF) applications. However, the very high power density in the active region of GaN HEMTs leads to significant degradation in performance as the device temperature increases. Thus,

Advanced Materials for Thermal Management of Electronic Packaging

Advanced Materials for Thermal Management of Electronic Packaging
  • Author : Xingcun Colin Tong
  • Publisher : Springer Science & Business Media
  • Release : 05 January 2011
GET THIS BOOKAdvanced Materials for Thermal Management of Electronic Packaging

The need for advanced thermal management materials in electronic packaging has been widely recognized as thermal challenges become barriers to the electronic industry’s ability to provide continued improvements in device and system performance. With increased performance requirements for smaller, more capable, and more efficient electronic power devices, systems ranging from active electronically scanned radar arrays to web servers all require components that can dissipate heat efficiently. This requires that the materials have high capability of dissipating heat and maintaining

Gallium Nitride Electronics

Gallium Nitride Electronics
  • Author : Rüdiger Quay
  • Publisher : Springer Science & Business Media
  • Release : 05 April 2008
GET THIS BOOKGallium Nitride Electronics

This book is based on nearly a decade of materials and electronics research at the leading research institution on the nitride topic in Europe. It is a comprehensive monograph and tutorial that will be of interest to graduate students of electrical engineering, communication engineering, and physics; to materials, device, and circuit engineers in research and industry; to all scientists with a general interest in advanced electronics.

GaN Transistors for Efficient Power Conversion

GaN Transistors for Efficient Power Conversion
  • Author : Alex Lidow,Michael de Rooij,Johan Strydom,David Reusch,John Glaser
  • Publisher : John Wiley & Sons
  • Release : 23 August 2019
GET THIS BOOKGaN Transistors for Efficient Power Conversion

An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic

Gallium Nitride Power Devices

Gallium Nitride Power Devices
  • Author : Hongyu Yu,Tianli Duan
  • Publisher : CRC Press
  • Release : 06 July 2017
GET THIS BOOKGallium Nitride Power Devices

GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure

Issues in General Science and Scientific Theory and Method: 2013 Edition

Issues in General Science and Scientific Theory and Method: 2013 Edition
  • Author : Anonim
  • Publisher : ScholarlyEditions
  • Release : 01 May 2013
GET THIS BOOKIssues in General Science and Scientific Theory and Method: 2013 Edition

Issues in General Science and Scientific Theory and Method: 2013 Edition is a ScholarlyEditions™ book that delivers timely, authoritative, and comprehensive information about Mixed Methods Research. The editors have built Issues in General Science and Scientific Theory and Method: 2013 Edition on the vast information databases of ScholarlyNews.™ You can expect the information about Mixed Methods Research in this book to be deeper than what you can access anywhere else, as well as consistently reliable, authoritative, informed, and relevant. The content of

Handbook of Flexible and Stretchable Electronics

Handbook of Flexible and Stretchable Electronics
  • Author : Muhammad M. Hussain,Nazek El-Atab
  • Publisher : CRC Press
  • Release : 03 December 2019
GET THIS BOOKHandbook of Flexible and Stretchable Electronics

Flexibility and stretchability of electronics are crucial for next generation electronic devices that involve skin contact sensing and therapeutic actuation. This handbook provides a complete entrée to the field, from solid-state physics to materials chemistry, processing, devices, performance, and reliability testing, and integrated systems development. This work shows how microelectronics, signal processing, and wireless communications in the same circuitry are impacting electronics, healthcare, and energy applications. Key Features: • Covers the fundamentals to device applications, including solid-state and mechanics, chemistry,

Gallium Nitride Processing for Electronics, Sensors and Spintronics

Gallium Nitride Processing for Electronics, Sensors and Spintronics
  • Author : Stephen J. Pearton,Cammy R. Abernathy,Fan Ren
  • Publisher : Springer Science & Business Media
  • Release : 24 February 2006
GET THIS BOOKGallium Nitride Processing for Electronics, Sensors and Spintronics

Semiconductor spintronics is expected to lead to a new generation of transistors, lasers and integrated magnetic sensors that can be used to create ultra-low power, high speed memory, logic and photonic devices. Useful spintronic devices will need materials with practical magnetic ordering temperatures and current research points to gallium and aluminium nitride magnetic superconductors as having great potential. This book details current research into the properties of III-nitride semiconductors and their usefulness in novel devices such as spin-polarized light emitters,

Assessing Polymeric Nanocomposites and Advanced Cooling Techniques for Thermal Management of Next-generation Power Electronics

Assessing Polymeric Nanocomposites and Advanced Cooling Techniques for Thermal Management of Next-generation Power Electronics
  • Author : Palash Vadiraj Acharya
  • Publisher : Unknown Publisher
  • Release : 19 October 2021
GET THIS BOOKAssessing Polymeric Nanocomposites and Advanced Cooling Techniques for Thermal Management of Next-generation Power Electronics

The field of power electronics devices has seen two significant trends in recent years: rapid miniaturization of devices and the replacement of silicon-based devices with wide bandgap semiconductor materials-based devices (Silicon Carbide (SiC), Gallium Nitride (GaN)). The end result of these advancements are devices that need advanced cooling technologies to dissipate ultrahigh high and concentrated heat loads. Multiple advanced thermal management solutions such as liquid cooling, jet, and spray impingement have been proposed as potential solutions. The present dissertation quantifies

Gallium Nitride and Related Wide Bandgap Materials and Devices

Gallium Nitride and Related Wide Bandgap Materials and Devices
  • Author : R. Szweda
  • Publisher : Elsevier
  • Release : 07 July 2000
GET THIS BOOKGallium Nitride and Related Wide Bandgap Materials and Devices

The second edition of Gallium Nitride & Related Wide Bandgap Materials and Devices provides a detailed insight into the global developments in GaN, SiC and other optoelectronic materials. This report also examines the implication for both suppliers and users of GaN technology. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Thermal Management of Electric Vehicle Battery Systems

Thermal Management of Electric Vehicle Battery Systems
  • Author : Ibrahim Dincer,Halil S. Hamut,Nader Javani
  • Publisher : John Wiley & Sons
  • Release : 03 January 2017
GET THIS BOOKThermal Management of Electric Vehicle Battery Systems

Thermal Management of Electric Vehicle Battery Systems provides a thorough examination of various conventional and cutting edge electric vehicle (EV) battery thermal management systems (including phase change material) that are currently used in the industry as well as being proposed for future EV batteries. It covers how to select the right thermal management design, configuration and parameters for the users’ battery chemistry, applications and operating conditions, and provides guidance on the setup, instrumentation and operation of their thermal management systems (